Heating PMOS - MapleSim Help
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Heating PMOS

Simple PMOS Transistor with heating port

 

Description

Equations

Variables

Connections

Parameters

Modelica Standard Library

Description

The Heating PMOS model is a simple model of a n-channel metal-oxide semiconductor FET. The model does not contain capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

The electrical parameters are temperature dependent. An optional heat port may be connected to a heatsink.

On-Resistance

When used as a switch, the on-resistance of the transistor is approximately

where  is the applied gate-to-source voltage.

Because the default parameter values yield a relatively high on-resistance. the product  should be increased by several orders of magnitude when using this device in a high-power application.

Equations

Variables

Name

Units

Description

Modelica ID

Loss power leaving component via HeatPort

LossPower

Temperature of HeatPort

T_heatPort

Connections

Name

Description

Modelica ID

Drain

D

Gate

G

Source

S

Bulk

B

Conditional heat port

heatPort

Parameters

Name

Default

Units

Description

Modelica ID

Width of channel

W

Length of channel

L

Narrowing of channel

dW

Shortening of channel

dL

Transconductance parameter

Beta

Zero bias threshold voltage

Vt

Bulk threshold parameter

K2

Reduction of pinch-off region

K5

fitting parameter for Vt

kvt

Fitting parameter for kk2

kk2

Drain-Source resistance

RDS

Parameter measurement temperature

Tnom

Fixed device temperature if Use Heat Port is false

T

 

True (checked) means heat port is enabled

useHeatPort

Modelica Standard Library

The component described in this topic is from the Modelica Standard Library. To view the original documentation, which includes author and copyright information, click here.

See Also

Analog Components

Electrical Library

MOSFET Transistors

 


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